Isonics Silicon Products and Services Division - SOI Specifications

Diameters
100, 125, 150 and 200mm

Device Layer Thickness
2 to 20µm +/- 0.5µm (10mm edge exclusion)
21 to 100µm +/- 1µm
101 to 300µm +/- 2µm

Thermal Oxide Thickness
0.2 to 2.0µm +/- 5%

Handle Wafer Thickness
300 to 725µm +/- 25µm

Dopants
N-type and P-type available

Resistivity
1-20 ohm-cm standard (special ranges available)

Orientation
<100> or <111>, FZ or CZ